?2004 fairchild semiconductor corporation fgaf40n60uf rev. a igbt fgaf40n60uf fgaf40n60uf ultrafast igbt general description fairchild's uf series of insulated gate bipolar transistors (igbts) provides low conduction and switching losses. the uf series is designed for applications such as motor control and general inverters where high speed switching is a required feature. features ? high speed switching ? low saturation voltage : v ce(sat) = 2.3 v @ i c = 20a ? high input impedance absolute maximum ratings t c = 25 c unless otherwise noted notes : (1) repetitive rating : pulse width limited by max. junction temperature thermal characteristics symbol description fgaf40n60uf units v ces collector-emitter voltage 600 v v ges gate-emitter voltage 20 v i c collector current @ t c = 25 c40 a collector current @ t c = 100 c20 a i cm (1) pulsed collector current 160 a p d maximum power dissipation @ t c = 25 c 100 w maximum power dissipation @ t c = 100 c40 w t j operating junction temperature -55 to +150 c t stg storage temperature range -55 to +150 c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction-to-case -- 1.2 c / w r ja thermal resistance, junction-to-ambient -- 40 c / w applications ac & dc motor controls, general purpose inverters, robotics, and servo controls. g c e to-3pf g c e g c e
fgaf40n60uf rev. a fgaf40n60uf ?2004 fairchild semiconductor corporation electrical characteristics of the igbt t c = 25 c unless otherwise noted symbol parameter test conditions min. typ. max. units off characteristics bv ces collector-emitter breakdown voltage v ge = 0v, i c = 250ua 600 -- -- v ? b vces / ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -- 0.6 -- v/ c i ces collector cut-off current v ce = v ces , v ge = 0v -- -- 250 ua i ges g-e leakage current v ge = v ges , v ce = 0v -- -- 100 na on characteristics v ge(th) g-e threshold voltage i c = 20ma, v ce = v ge 3.5 5.1 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -- 2.3 3.0 v i c = 40a , v ge = 15v -- 3.1 -- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz -- 1075 -- pf c oes output capacitance -- 170 -- pf c res reverse transfer capacitance -- 50 -- pf switching characteristics t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 ? , v ge = 15v, inductive load, t c = 25 c -- 15 -- ns t r rise time -- 30 -- ns t d(off) turn-off delay time -- 65 130 ns t f fall time -- 35 100 ns e on turn-on switching loss -- 470 -- uj e off turn-off switching loss -- 130 -- uj e ts total switching loss -- 600 1000 uj t d(on) turn-on delay time v cc = 300 v, i c = 20a, r g = 10 ? , v ge = 15v , inductive load, t c = 125 c -- 30 -- ns t r rise time -- 37 -- ns t d(off) turn-off delay time -- 110 200 ns t f fall time -- 80 250 ns e on turn - on switching loss -- 500 -- uj e off turn - off switching loss -- 310 -- uj e ts total switching loss -- 810 1200 uj q g total gate charge v ce = 300 v, i c = 20a, v ge = 15v -- 77 150 nc q ge gate-emitter charge -- 20 30 nc q gc gate-collector charge -- 25 40 nc l e internal emitter inductance measured 5mm from pkg -- 14 -- nh
fgaf40n60uf rev. a fgaf40n60uf ?2004 fairchild semiconductor corporation 0.1 1 10 100 1000 0 5 10 15 20 25 30 vcc = 300v load current : peak of square wave duty cycle : 50% tc = 100 powe dissipation = 24w load current [a] frequency [khz] fig 1. typical output characteristics fig 2. typical saturation voltage characteristics fig 4. load current vs. frequency fig 5. saturation voltage vs. v ge fig 6. saturation voltage vs. v ge 02468 0 40 80 120 160 12v 15v 20v v ge = 10v common emitter tc = 25 collector current, i c (a) collector-emitter voltage,v ce (v) 110 0 10 20 30 40 50 60 70 80 0.5 common emitter v ge =15v tc= 25 tc= 125 collector current , ic (a) collector-emitter voltage, v ce (v) 0306090120150 0 1 2 3 4 20a ic=10a 40a common emitter vge=15v case temperature, t c [ ] collector - emitter voltage, v ce [v] 0 4 8 12 16 20 0 4 8 12 16 20 40a 20a i c = 10a common emitter t c = 25 gate - emitter voltage, v ge [v] collector - emitter voltage, v ce [v] 0 4 8 121620 0 4 8 12 16 20 20a 40a ic=10a common emitter t c = 125 collector - emitter voltage, v ce [v] gate - emitter voltage, v ge [v] fig 3. saturation voltage vs. case temperature at variant current level
fgaf40n60uf rev. a fgaf40n60uf ?2004 fairchild semiconductor corporation fig 7. capacitance characteristics fig 8. turn-on characteristics vs. gate resistance fig 9. turn-off characteristics vs. gate resistance fig 10. switching loss vs. gate resistance fig 11. turn-on characteristics vs. collector current fig 12. turn-off characteristics vs. collector current 110 0 500 1000 1500 2000 2500 3000 common emitter v ge = 0v, f = 1mhz t c = 25 30 cres coes cies capacitance (pf) collector-emitter voltage, v ce (v) 110100 100 1000 20 200 tf common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 toff tf switching time (ns) gate resistance, r g ( ? ) 1 10 100 100 1000 2000 50 200 eon eoff common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 switching time (uj) gate resistance, r g ( ? ) 10 15 20 25 30 35 40 10 100 200 tr ton collector current, ic (a) switching time (ns) common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 10 15 20 25 30 35 40 100 1000 20 tf toff common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 collector current, i c [a] switching time [ns] toff tf 110100 10 100 200 300 ton tr common emitter vcc=300v,v ge = 15v ic=20a tc = 25 tc = 125 - - - - switching time (ns) gate resistance, r g ( ? )
fgaf40n60uf rev. a fgaf40n60uf ?2004 fairchild semiconductor corporation 1e-5 1e-4 1e-3 0.01 0.1 1 10 0.01 0.1 1 0.5 0.2 0.1 0.05 0.02 0.01 single pulse thermal response [zthjc] rectangular pulse duration [sec] 1 10 100 1000 0.1 1 10 100 500 safe operating area v ge =20v, t c =100 o c collector current, i c [a] collector-emitter voltage, v ce [v] fig 14. gate charge characteristics fig 15. soa characteristics fig 16. turn-off soa characteristics fig 13. switching loss vs. collector current pdm t1 t2 duty factor d = t1 / t2 peak tj = pdm zthjc + t c fig 17. transient thermal impedance of igbt 10 15 20 25 30 35 40 10 100 1000 3000 eoff switching time (uj) eon eoff common emitter v cc = 300v, v ge = 15v r g = 10 ? t c = 25 t c = 125 collector current , ic (a) 0 306090120 0 3 6 9 12 15 200v 300v vcc=100v common emitter r l =15 ? (tc=25 ) gate-emitter voltage, v ge (v) gate charge, qg (nc) 1 10 100 1000 0.1 1 10 100 50 s 100 s 1ms dc operation ic max (pulsed) ic max (continuous) single nonrepetitive pulse tc = 25 o c curves must be derated linearly with increase in temperature collector current, ic [a] collector - emitter voltage, v ce [v]
?2004 fairchild semiconductor corporation fgaf40n60uf rev. a fgaf40n60uf package dimensions to-3pf 15.50 0.20 ?.60 0.20 26.50 0.20 4.50 0.20 10.00 0.20 16.50 0.20 10 16.50 0.20 22.00 0.20 23.00 0.20 1.50 0.20 14.50 0.20 2.00 0.20 2.00 0.20 2.00 0.20 0.85 0.03 2.00 0.20 5.50 0.20 3.00 0.20 (1.50) 3.30 0.20 2.00 0.20 4.00 0.20 2.50 0.20 14.80 0.20 3.30 0.20 2.00 0.20 5.50 0.20 0.75 +0.20 ?.10 0.90 +0.20 ?.10 5.45typ [5.45 0.30 ] 5.45typ [5.45 0.30 ] dimensions in millimeters
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careers | sitema go datasheets, samples, buy technical information applications design center support company investors my f a home >> find products >> product status/pricing/packaging fgaf40n60uf ultrafast igbt general description back to top features back to top applications back to top contents ? general description ? features ? applications ? product status/pricing/packaging ? order samples ? qualification support fairchild's uf series of insulated gate bi polar transistors (igbts) provides low conduction and switching losses. the uf series is designed for applications such as motor control and general inverters where high speed switching is a required feature. z high speed switching z low saturation voltage : v ce(sat) = 2.3 v @ i c = 20a z high input impedance z ac & dc motor controls , general purpose inverters, robotics, and servo controls. datasheet download this datasheet e - mail this datasheet this page print version product product status pb-free status pricing* package type leads packing method package marking convention** related links request samples how to order products product change notices (pcns) support sales support quality and reliability design cente r pa g e 1 of 2 product folder - fairchild p/n fgaf40n60uf - ultrafast igbt 17-au g -2007 mhtml:file://c:\temp\FGAF40N60UFTU.mht
back to top qualification support click on a product for detailed qualification data back to top FGAF40N60UFTU full production $3.12 to - 3pf 3 rail line 1: $y (fairchild logo) * fairchild 1,000 piece budgetary pricing ** a sample button will appear if the part is available through fa irchild's on-line samples program. if there is no sample butt on, please contact a fairchild distributor to obtain samples indicates product with pb -free second-level interconne ct. for more information click here. package marking information for product fgaf40n60uf is available. click here for more information . product FGAF40N60UFTU ? 2007 fairchild semiconductor products | design center | support | company news | investors | my fairchild | contact us | site index | privacy policy | site terms & conditions | standard terms & conditions o pa g e 2 of 2 product folder - fairchild p/n fgaf40n60uf - ultrafast igbt 17-au g -2007 mhtml:file://c:\temp\FGAF40N60UFTU.mht
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